OBSERVATION OF CONFIGURATION SWITCHING OF THE D-CENTER IN A-SI-H

被引:11
作者
LEEN, TM
COHEN, JD
机构
[1] Department of Physics, University of Oregon, Eugene
基金
美国国家科学基金会;
关键词
D O I
10.1016/S0022-3093(05)80120-6
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We report evidence for two configurations of the D- center in the same a-Si:H sample: one possessing the usual electron thermal emission energy of roughly 0.9 eV (D-) and the other possessing a thermal emission energy between 0.6 to 0.7 eV (D-)*. The (D-)* state is observed soon after the capture of electrons into D(o) states within the deep depletion region of a Schottky barrier diode. As the time of occupation of the defect increases we observe that the emission rate decreases dramatically, implying a significant increase in its thermal emission energy. We have also found that this state exhibits an usually large optical energy threshold, near 1.3 eV. This implies a large degree of lattice relaxation between the (D-)* state and the conduction band.
引用
收藏
页码:319 / 322
页数:4
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