Polarized optical studies of ordered InGaP2 under pressure

被引：2

作者：

Chandrasekhar, HR ^{[1
]}

Chandrasekhar, M ^{[1
]}

Thomas, RJ ^{[1
]}

Jones, ED ^{[1
]}

Schneider, RP ^{[1
]}

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1995年 / 18卷 / 02期

关键词：

D O I：

10.1006/spmi.1995.1097

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this paper, we discuss polarized photomodulated reflectivity (PR) and photoluminescence (PL) studies of MOCVD grown InGaP2 epilayers lattice-matched to a GaAs substrate. These structures were grown on a (001) face with a misorientation of two degrees along [110]. The PR spectra of the ordered sample show a strong polarization dependence. For the electric field E parallel to <[(1)over bar 10]> two features in the PR spectra are seen; for E parallel to[110], however, additional features are observed. A comparison with the spectra of disordered samples of the same alloy composition has enabled a determination of the band gap reduction due to ordering. The linewidths of the PR peaks are approximately 5-10 meV which has enabled us to study them in detail as a function of hydrostatic pressure at cryogenic temperatures. The pressure dependence is slightly sublinear with the first order term of 8-9 meV kbar(-1) for pressures well below the Gamma-X crossover. Also observed is the indirect level crossing which occurs under pressure at about 40-kbar. An analysis of PR lineshapes at 1-bar is also presented at several commonly used experimental temperatures. (C) 1995 Academic Press Limited

引用

页码：131 / 137

页数：7

共 12 条

[1] SPONTANEOUS ORDERING IN GAINP2 - A POLARIZED-PIEZOMODULATED-REFLECTIVITY STUDY [J].