ELIMINATION OF LIGHT-INDUCED EFFECT IN HYDROGENATED AMORPHOUS-SILICON

被引：2

作者：

CHEN, YF

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 14期

关键词：

D O I：

10.1063/1.100404

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1277 / 1278

页数：2

共 12 条

[1]

BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556

[2] DETERMINATION OF GAP STATE DENSITY DISTRIBUTION IN HYDROGENATED AMORPHOUS-SILICON FROM LIGHT-INDUCED EFFECTS [J].

CHEN, YF ;

HUANG, YS .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (04) :1514-1516

[3] EVIDENCE FOR HYDROGEN MOTION IN ANNEALING OF LIGHT-INDUCED METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON [J].

JACKSON, WB ;

KAKALIOS, J .

PHYSICAL REVIEW B, 1988, 37 (02) :1020-1023

[4] NEUTRALIZATION OF SHALLOW ACCEPTOR LEVELS IN SILICON BY ATOMIC-HYDROGEN [J].

PANKOVE, JI ;

CARLSON, DE ;

BERKEYHEISER, JE ;

WANCE, RO .

PHYSICAL REVIEW LETTERS, 1983, 51 (24) :2224-2225

[5]

PANKOVE JI, 1980, APPL PHYS LETT, V35, P937

[6] MECHANISMS FOR PECULIAR LOW-TEMPERATURE PHENOMENA IN HYDROGENATED AMORPHOUS-SILICON [J].

PANTELIDES, ST .

PHYSICAL REVIEW LETTERS, 1987, 58 (13) :1344-1347

[7] HYDROGEN IN CRYSTALLINE SEMICONDUCTORS [J].

PEARTON, SJ ;

CORBETT, JW ;

SHI, TS .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 43 (03) :153-195

[8] STATUS OF RESEARCH ON THE LIGHT-INDUCED EFFECT IN A-SI MATERIALS AND A-SI SOLAR-CELLS [J].

SABISKY, ES .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1986, 87 (1-2) :43-63

[9] REVERSIBLE CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED AMORPHOUS SI [J].

STAEBLER, DL ;

WRONSKI, CR .

APPLIED PHYSICS LETTERS, 1977, 31 (04) :292-294

[10] LIGHT-INDUCED METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON - A SYSTEMATIC STUDY [J].

STUTZMANN, M ;

JACKSON, WB ;

TSAI, CC .

PHYSICAL REVIEW B, 1985, 32 (01) :23-47

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