LEELS STUDY OF THE FORMATION OF THE AG-SEMICONDUCTOR (SI.GE.A3B5) INTERFACE AT 10K

The LEELS spectra of Si, Ge and A3B5 compounds were taken at RT and LT during Ag deposition in the coverage range 0-18 ML. Annealing fron LT to RT was studied as well. Strong chemical interaction between Ag and Ge already at LT was observed in distinction from the system Si+Ag where it starts only at higher temperatures. GaAs+Ag, InP+Ag and InAs+Ag systems behave qualitatively identical. InSb+Ag strongly differs from other systems concerning silver plasmon behaviour. We suppose that it is due to BCC silver formation at LT. Our data argue in favor of the following mechanisms of Ag film growth at RT : Stranskii-Krastanov for Si and Ge substrates and Volmer-Weber for GaAs, InAs and InP. © 1990.