EFFECT OF RADIATION-INDUCED CHARGE ON 1/F NOISE IN MOS DEVICES

被引：72

作者：

MEISENHEIMER, TL

FLEETWOOD, DM

机构：

[1] Division 2147, Sandia National Laboratories, Albuquerque

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1990年 / 37卷 / 06期

关键词：

Noise; Spurious Signal - Semiconductor Devices; MOS;

D O I：

10.1109/23.101179

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have measured 1/f noise in MOS transistors as a function of gate and drain bias, total ionizing dose, and postirradiation biased annealing time. The transistors tested varied in size, radiation hardness, and process technology. The radiation-induced 1/f noise correlates strikingly with the oxide trap charge through irradiation and anneal, but not with interface-trap charge, for frequencies up to 10 kHz. This implies that oxide trapped charge is the pre-dominant factor which leads to the increased 1/f noise in irradiated MOS devices. © 1990 IEEE

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收藏

页码：1696 / 1702

页数：7

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