CORRELATION BETWEEN 1/F NOISE AND INTERFACE STATE DENSITY AT THE FERMI LEVEL IN FIELD-EFFECT TRANSISTORS

被引：50

作者：

MAES, HE

USMANI, SH

GROESENEKEN, G

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 10期

关键词：

D O I：

10.1063/1.335297

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4811 / 4813

页数：3

共 13 条

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[7] 1/F NOISE IN THIN OXIDE P-CHANNEL METAL-NITRIDE-OXIDE-SILICON TRANSISTORS [J].

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USMANI, SH .

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[8]

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[9]

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[10] MODIFIED 1/F TRAPPING NOISE THEORY AND EXPERIMENTS IN MOS-TRANSISTORS BIASED FROM WEAK TO STRONG INVERSION INFLUENCE OF INTERFACE STATES [J].

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