HCL AQUEOUS-SOLUTION DILUTED WITH METHANOL AS AN ELECTROLYTE FOR C-V PROFILINGS OF GAAS AND INP

C-V profiling and net dopant concentration measurement using "Post Office Profile Plotter" have been widely carried out for GaAs and other III-V compound semiconductor materials (1-3). The electrolyte is selected for the material to form an electrical contact to the semiconductor and to react with the semiconductor to remove a given thickness of material per unit charge passed. Tiron electrolyte (2) and a solution of sodium hydroxide (NaOH) and disodium ethylenediamine tetraacetate (4) are used for GaAs and AlGaAs. In this note, a simple electrolyte of hydrochloric acid (HCl) aqueous solution diluted with methanol is presented to be useful for GaAs, AlGaAs, and InP. The electrolyte is especially effective for p+-GaAs, where the tiron electrolyte often encountered soft breakdown.