ELECTRICAL MEASUREMENTS OF THE GRAIN-BOUNDARY LEVELS IN SEMICONDUCTORS

被引：10

作者：

BRONIATOWSKI, A

机构：

来源：

JOURNAL DE PHYSIQUE | 1982年 / 43卷 / NC1期

关键词：

D O I：

10.1051/jphyscol:1982110

中图分类号：

学科分类号：

摘要：

引用

页码：63 / 73

页数：11

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BRONIATOWSKI, A ;

BOURGOIN, JC .

[2]

Broniatowski A., 1982, Grain Boundaries in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P119

[3]

Cheng L. J., 1982, Grain Boundaries in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P105

LANG, DV .

[5] INTERFACE RECOMBINATION OF CHARGE-CARRIERS IN BICRYSTALS [J].

LEONG, JY ;

YEE, JH .

[6] RECOMBINATION OF EXCESS CARRIERS AT TWIN STRUCTURES IN GERMANIUM [J].

MCKELVEY, JP .

[7] CURRENT FLOW ACROSS GRAIN BOUNDARIES IN N-TYPE GERMANIUM .1. [J].

MUELLER, RK .

[8] DC VOLTAGE DEPENDENCE OF SEMICONDUCTOR GRAIN-BOUNDARY RESISTANCE [J].

PIKE, GE ;

SEAGER, CH .

[9]

RHODERICK EH, 1978, METAL SEMICONDUCTOR, pCH4

[10] GRAIN-BOUNDARY RECOMBINATION - THEORY AND EXPERIMENT IN SILICON [J].

SEAGER, CH .