RECOMBINATION OF EXCESS CARRIERS AT TWIN STRUCTURES IN GERMANIUM

被引：3

作者：

MCKELVEY, JP

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1961年 / 32卷 / 03期

关键词：

D O I：

10.1063/1.1736021

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：442 / &

共 11 条

[1] DENDRITIC GROWTH OF GERMANIUM CRYSTALS [J].

BENNETT, AI ;

LONGINI, RL .

PHYSICAL REVIEW, 1959, 116 (01) :53-61

[2] TRANSMISSION OF ELECTRONS AND HOLES ACROSS A TWIN BOUNDARY IN GERMANIUM [J].

BILLIG, E ;

RIDOUT, MS .

NATURE, 1954, 173 (4402) :496-497

[3]

BILLIG E, 1955, P ROY SOC, VA229, P346

[4] PROPAGATION MECHANISM OF GERMANIUM DENDRITES [J].

HAMILTON, DR ;

SEIDENSTICKER, RG .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (07) :1165-1168

[5] VOLUME AND SURFACE RECOMBINATION RATES FOR INJECTED CARRIERS IN GERMANIUM [J].

MCKELVEY, JP ;

LONGINI, RL .

JOURNAL OF APPLIED PHYSICS, 1954, 25 (05) :634-641

[6] EXPERIMENTAL DETERMINATION OF INJECTED CARRIER RECOMBINATION RATES AT DISLOCATIONS IN SEMICONDUCTORS [J].

MCKELVEY, JP .

PHYSICAL REVIEW, 1957, 106 (05) :910-917

[7] RECOMBINATION OF INJECTED CARRIERS AT DISLOCATION EDGES IN SEMICONDUCTORS [J].

MCKELVEY, JP ;

LONGINI, RL .

PHYSICAL REVIEW, 1955, 99 (04) :1227-1232

[8]

Shockley W., 1950, ELECT HOLES SEMICOND, P321

[9] MEASUREMENT OF CARRIER LIFETIMES IN GERMANIUM AND SILICON [J].

STEVENSON, DT ;

KEYES, RJ .

JOURNAL OF APPLIED PHYSICS, 1955, 26 (02) :190-195

[10] THE TRANSPORT OF ADDED CURRENT CARRIERS IN A HOMOGENEOUS SEMICONDUCTOR [J].

VANROOSBROECK, W .

PHYSICAL REVIEW, 1953, 91 (02) :282-289

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