POST-HYDROGENATED CHEMICAL VAPOR-DEPOSITED AMORPHOUS-SILICON SCHOTTKY DIODES

被引：16

作者：

SZYDLO, N

MAGARINO, J

KAPLAN, D

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 07期

关键词：

D O I：

10.1063/1.331381

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：5044 / 5051

页数：8

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