A BIPOLAR PHOTODETECTOR COMPATIBLE WITH STANDARD CMOS TECHNOLOGY

被引：8

作者：

VIDAL, MP ^{[1
]}

BAFLEUR, M ^{[1
]}

BUXO, J ^{[1
]}

SARRABAYROUSE, G ^{[1
]}

机构：

[1] UNIV CENT BARCELONA,E-08028 BARCELONA,SPAIN

来源：

SOLID-STATE ELECTRONICS | 1991年 / 34卷 / 08期

关键词：

D O I：

10.1016/0038-1101(91)90225-N

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new CMOS compatible bipolar photodetector is presented. The basic idea is that the bipolar characteristics are optimized independently of the photosensitivity. In order to evaluate the performance of this structure, a silicon test vehicle has been realized. A gain value as high as 120 was obtained using a biased polysilicon field-plate on top of the base surface. The proposed photodetector has shown very satisfactory properties such as a sensitivity of 0.75 electrons per photon, a wide dynamic range and a response time of 4-5-mu-s. The possible application to a wide-range, self-adaptive photometer is discussed.

引用

页码：809 / 814

页数：6

共 11 条

[1] TRANSMITTANCE OF AIR-SIO2-POLYSILICON-SIO2-SI STRUCTURES [J].