INGAASP PHOTO-DIODES

被引：32

作者：

STILLMAN, GE

COOK, LW

TABATABAIE, N

BULMAN, GE

ROBBINS, VM

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 04期

关键词：

D O I：

10.1109/T-ED.1983.21131

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：364 / 381

页数：18

共 94 条

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SAKAI, K ;

YAMAMOTO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (10) :1899-1900

[2] TUNNELING CURRENT IN INGAAS AND OPTIMUM DESIGN FOR INGAAS-INP AVALANCHE PHOTO-DIODE [J].

ANDO, H ;

KANBE, H ;

ITO, M ;

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[3]

ANTYPAS GA, 1972, IOP C P, V17, P48

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ARMIENTO, CA ;

GROVES, SH ;

HURWITZ, CE .

APPLIED PHYSICS LETTERS, 1979, 35 (04) :333-335

[5] INGAAS DETECTOR FOR 1.0-1.7-MUM WAVELENGTH RANGE [J].

BACHMANN, KJ ;

SHAY, JL .

APPLIED PHYSICS LETTERS, 1978, 32 (07) :446-448

[6]

BEUCHET G, 1980 P NATO C INP, P303

[7]

BEUCHET G, 1980, RADCTM8007 ROM AIR D

[8] THERMAL-EXPANSION PARAMETERS OF SOME GAXIN1-XASYP1-X ALLOYS [J].

BISARO, R ;

MERENDA, P ;

PEARSALL, TP .

APPLIED PHYSICS LETTERS, 1979, 34 (01) :100-102

[9]

Bulman G. E., 1981, International Electron Devices Meeting, P288

[10] THE EFFECT OF ELECTRO-ABSORPTION ON THE DETERMINATION OF IONIZATION COEFFICIENTS [J].

BULMAN, GE ;

COOK, LW ;

STILLMAN, GE .

APPLIED PHYSICS LETTERS, 1981, 39 (10) :813-815

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