STUDY OF TERTIARYBUTYLPHOSPHINE PYROLYSIS USING A DEUTERATED SOURCE

被引：28

作者：

LI, SH ^{[1
]}

LARSEN, CA ^{[1
]}

BUCHAN, NI ^{[1
]}

STRINGFELLOW, GB ^{[1
]}

KOSAR, WP ^{[1
]}

BROWN, DW ^{[1
]}

机构：

[1] ADV TECHNOL MAT INC,NEW MILFORD,CT 06776

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 12期

关键词：

D O I：

10.1063/1.343169

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5161 / 5165

页数：5

共 22 条

[1]

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STRINGFELLOW, GB .

APPLIED PHYSICS LETTERS, 1986, 49 (15) :963-965

[3] USE OF TERTIARYBUTYLARSINE FOR GAAS GROWTH [J].

CHEN, CH ;

LARSEN, CA ;

STRINGFELLOW, GB .

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[4] MOVPE GROWTH OF INP USING ISOBUTYLPHOSPHINE AND TERT-BUTYLPHOSPHINE [J].

CHEN, CH ;

LARSEN, CA ;

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ROBERTSON, AJ .

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[5]

CHEN CH, 1987, I PHYS C SER, V83, P75

[6] MOVPE GROWTH OF GAINASSB [J].

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JEN, HR ;

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STRINGFELLOW, GB ;

LUNDT, H ;

TAYLOR, PC .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :408-417

[7] GROWTH OF ULTRAPURE AND SI-DOPED INP BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

DIFORTEPOISSON, MA ;

BRYLINSKI, C ;

DUCHEMIN, JP .

APPLIED PHYSICS LETTERS, 1985, 46 (05) :476-478

[8]

GARDINER WC, 1984, COMBUSTION CHEM, P361

[9] ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF A NEW SEMICONDUCTOR ALLOY - GAP1-XSBX [J].

JOU, MJ ;

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[10]

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