THE POSITIVE TEMPERATURE-COEFFICIENT OF RESISTIVITY IN BARIUM-TITANATE

被引:306
作者
HUYBRECHTS, B
ISHIZAKI, K
TAKATA, M
机构
[1] Nagaoka University of Technology, Nagaoka, Niigata, 940-21
关键词
D O I
10.1007/BF00362121
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Positive temperature coefficient of resistivity (PTCR) materials have become very important components, and among these materials barium titanate compounds make up the most important group. When properly processed these compounds show a high PTCR at the Curie temperature (the transition temperature from the ferroelectric tetragonal phase to the paraelectric cube phase). In the first half of this paper literature related to the resistivity-temperature behaviour is discussed. As explained by the well established Heywang model, the PTCR effect is caused by trapped electrons at the grain boundaries. From reviewing experimental results in the literature it is clear that the PTCR effect can not be explained by assuming only one kind of electron trap. It is concluded that as well as barium vacancies, adsorbed oxygen as 3d-elements can act as electron traps. In the second half of this paper, the influence of the processing parameters on the PTCR related properties is discussed. Special emphasis is placed on the phenomenon that the conductivity and grain size decrease abruptly with increasing donor concentration above similar to 0.3 at%. Several models explaining this phenomenon are discussed and apparent discrepancies in experimental data are explained.
引用
收藏
页码:2463 / 2474
页数:12
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共 107 条
[51]   SYSTEMATIC EXPERIMENTAL AND THEORETICAL INVESTIGATION OF GRAIN-BOUNDARY RESISTIVITIES OF N-DOPED BATIO3 CERAMICS [J].
IHRIG, H ;
PUSCHERT, W .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (07) :3081-3088
[52]   PTC EFFECT IN BATIO3 AS A FUNCTION OF DOPING WITH 3D ELEMENTS [J].
IHRIG, H .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1981, 64 (10) :617-620
[53]   THE INFLUENCE OF MN ON THE GRAIN-BOUNDARY POTENTIAL BARRIER CHARACTERISTICS OF DONOR-DOPED BATIO3 CERAMICS [J].
ILLINGSWORTH, J ;
ALALLAK, HM ;
BRINKMAN, AW ;
WOODS, J .
JOURNAL OF APPLIED PHYSICS, 1990, 67 (04) :2088-2092
[54]  
Jaffe B., 1971, PIEZOELECTRIC CERAMI
[55]   THE INFLUENCE OF FOREIGN IONS ON THE CRYSTAL-LATTICE OF BARIUM-TITANATE [J].
JONKER, GH ;
HAVINGA, EE .
MATERIALS RESEARCH BULLETIN, 1982, 17 (03) :345-350
[56]   SOME ASPECTS OF SEMICONDUCTING BARIUM TITANATE [J].
JONKER, GH .
SOLID-STATE ELECTRONICS, 1964, 7 (12) :895-903
[57]   HALOGEN TREATMENT OF BARIUM TITANATE SEMICONDUCTORS [J].
JONKER, GH .
MATERIALS RESEARCH BULLETIN, 1967, 2 (04) :401-&
[58]  
Jonker GH., 1981, ADV CERAM, P155
[59]  
KATO E, 1967, J CHEM SOC JPN IND C, V70, P252
[60]   DETERMINATION OF INVERSION TEMPERATURE OF SB2O3-DOPED BATIO3 POSITIVE TEMPERATURE-COEFFICIENT OF RESISTIVITY (PTCR) CERAMICS BY THE FINITE-DIFFERENCE METHOD [J].
KIM, HS ;
SUNG, GY ;
KIM, CH .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1992, 75 (03) :587-591