TECHNOLOGICAL AND PHYSICAL ASPECTS OF THE MAIN EL2 DEFECT IN GAAS

被引：11

作者：

KAMINSKA, M ^{[1
]}

SKOWRONSKI, M ^{[1
]}

KUSZKO, W ^{[1
]}

LAGOWSKI, J ^{[1
]}

PARSEY, J ^{[1
]}

GATOS, HC ^{[1
]}

机构：

[1] MIT,CAMBRIDGE,MA 02139

来源：

CZECHOSLOVAK JOURNAL OF PHYSICS | 1984年 / 34卷 / 05期

关键词：

D O I：

10.1007/BF01590082

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：409 / 414

页数：6

共 12 条

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[3] INTRACENTER TRANSITIONS IN THE DOMINANT DEEP LEVEL (EL2) IN GAAS [J].

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GATOS, HC .

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[4]

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[5] ORIGIN OF THE 0.82-EV ELECTRON TRAP IN GAAS AND ITS ANNIHILATION BY SHALLOW DONORS [J].

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WADA, K ;

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[6]

LAGOWSKI J, 1982, 10TH P INT S GAAS RE

[7]

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[8] THEORETICAL-STUDY OF NATIVE DEFECTS IN III-V SEMICONDUCTORS [J].

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REINECKE, TL .

PHYSICAL REVIEW B, 1983, 27 (02) :1101-1114

[9] OPTICAL ASSESSMENT OF THE MAIN ELECTRON TRAP IN BULK SEMI-INSULATING GAAS [J].

MARTIN, GM .

APPLIED PHYSICS LETTERS, 1981, 39 (09) :747-748

[10] BRIDGMAN-TYPE APPARATUS FOR THE STUDY OF GROWTH-PROPERTY RELATIONSHIPS - ARSENIC VAPOR-PRESSURE GAAS PROPERTY RELATIONSHIP [J].

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GATOS, HC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (02) :388-393

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