ELECTRICAL-PROPERTIES OF ELECTRON-IRRADIATED N-TYPE SILICON

被引:16
作者
SIGFRIDSSON, B [1 ]
LINDSTROM, JL [1 ]
机构
[1] NATL DEF RES INST,S-10450 STOCKHOLM,SWEDEN
关键词
D O I
10.1063/1.322387
中图分类号
O59 [应用物理学];
学科分类号
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页码:4611 / 4620
页数:10
相关论文
共 24 条
[21]   SPHERICAL-SQUARE-WELL DEFECT-POTENTIAL MODEL FOR 1-MEV ELECTRON-IRRADIATED DEFECTS IN SILICON [J].
WALKER, JW ;
SAH, CT .
PHYSICAL REVIEW B, 1973, 8 (12) :5597-5603
[22]   PROPERTIES OF 1.0-MEV-ELECTRON-IRRADIATED DEFECT CENTERS IN SILICON [J].
WALKER, JW ;
SAH, CT .
PHYSICAL REVIEW B, 1973, 7 (10) :4587-4605
[23]  
YOUNG RC, 1972, PHYS REV B, V5, P1955
[24]  
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