PHOTOINDUCED CHANGES IN AMORPHOUS-CHALCOGENIDE FILMS, MODIFIED AT LOW-TEMPERATURES

The selective solubility of amorphous As//2Se//3 and GeS//1//. //5 films modified by means of coevaporation with In or Ga at low substrate temperatures was investigated. The photoinduced change of the solubility of these films is more pronounced in comparison with films of the same composition but deposited at higher substrate temperatures. The optimum impurity concentrations and substrate temperatures at which the modified films demonstrated maximum photoinduced changes of the dissolving rate were specified as about 5 at% In at a minus 60 degree C substrate temperature for As//2Se//3 and about 10 at% In or Ga at minus 50 degree C for GeS//1//. //5. These films may be promising as nonsilver negative photoresists.