QUESTION OF SURFACE STATES ON CLEAVED GAAS(110) SURFACES

被引：29

作者：

FROITZHEIM, H ^{[1
]}

IBACH, H ^{[1
]}

机构：

[1] KERNFORSCH ANLAGE JULICH,INST GRENZFLACHEN FORSCH & VAKUUM PHYS,517 JULICH,FED REP GER

来源：

SURFACE SCIENCE | 1975年 / 47卷 / 02期

关键词：

D O I：

10.1016/0039-6028(75)90221-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：713 / 716

页数：4

共 16 条

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FISCHER, TE .

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[2] OXYGEN-INDUCED FRANZ-KELDYSH EFFECT AND SURFACE STATES ON GAAS(110) SURFACES IN ELLIPSOMETRY [J].

DORN, R ;

LUTH, H .

PHYSICAL REVIEW LETTERS, 1974, 33 (17) :1024-1027

[3]

DORN R, 1974, PHYS REV B, V15

[4]

DORN R, 1974, VERHANDL DEUT PHYSIK, V8, P659

[5] PHOTOEMISSION DENSITIES OF INTRINSIC SURFACE STATES FOR SI, GE, AND GAAS [J].

EASTMAN, DE ;

GROBMAN, WD .

PHYSICAL REVIEW LETTERS, 1972, 28 (21) :1378-&

[6] INTERBAND-TRANSITIONS IN ZNO OBSERVED IN LOW-ENERGY ELECTRON-SPECTROSCOPY [J].

FROITZHEIM, H ;

IBACH, H .

ZEITSCHRIFT FUR PHYSIK, 1974, 269 (01) :17-22

[7]

FROITZHEIM H, TO BE PUBLISHED

[8] SURFACE STATE BAND ON GAAS (110) FACE [J].

GREGORY, PE ;

SPICER, WE ;

CIRACI, S ;

HARRISON, WA .

APPLIED PHYSICS LETTERS, 1974, 25 (09) :511-514

[9] ELECTRONIC-TRANSITIONS OF OXYGEN ADSORBED ON CLEAN SILICON (111) AND (100) SURFACES [J].

IBACH, H ;

ROWE, JE .

PHYSICAL REVIEW B, 1974, 9 (04) :1951-1957

[10]

LUDEKE R, RC4861 IBM RES REP

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