GAINP GROWTH BY CHLORIDE VAPOR-PHASE EPITAXY

[31] INTERFACE PROPERTIES FOR GAAS/INGAALP HETEROJUNCTIONS BY THE CAPACITANCE-VOLTAGE PROFILING TECHNIQUE [J]. APPLIED PHYSICS LETTERS, 1987, 50 (14) : 906 - 908

[32] BAND DISCONTINUITY FOR GAAS ALGAAS HETEROJUNCTION DETERMINED BY C-V PROFILING TECHNIQUE [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5340 - 5344

[33] MEASUREMENTS OF DENSITY OF GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (04) : 1002 - &

[34] WU M, 1985, J APPL PHYS, V58, P1573

[35] TELLURIUM AND ZINC DOPING IN IN0.5GA0.5P GROWN BY LIQUID-PHASE EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (11) : 4317 - 4321

[31] INTERFACE PROPERTIES FOR GAAS/INGAALP HETEROJUNCTIONS BY THE CAPACITANCE-VOLTAGE PROFILING TECHNIQUE [J]. APPLIED PHYSICS LETTERS, 1987, 50 (14) : 906 - 908

[32] BAND DISCONTINUITY FOR GAAS ALGAAS HETEROJUNCTION DETERMINED BY C-V PROFILING TECHNIQUE [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5340 - 5344

[33] MEASUREMENTS OF DENSITY OF GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (04) : 1002 - &

[34] WU M, 1985, J APPL PHYS, V58, P1573

[35] TELLURIUM AND ZINC DOPING IN IN0.5GA0.5P GROWN BY LIQUID-PHASE EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (11) : 4317 - 4321