LOW-TEMPERATURE FABRICATION OF DIAMOND FILMS WITH NANOCRYSTAL SEEDING

被引：27

作者：

YARA, T

MAKITA, H

HATTA, A

ITO, T

HIRAKI, A

机构：

[1] Department of Electrical Engineering, Osaka University, Suita

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1995年 / 34卷 / 3A期

关键词：

DIAMOND FILM; CHEMICAL VAPOR DEPOSITION; MAGNETOACTIVE MICROWAVE PLASMA CVD; LOW-TEMPERATURE GROWTH; NANOCRYSTAL SEEDING;

D O I：

10.1143/JJAP.34.L312

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Well-faceted diamond films have heen fabricated at 200 degrees C on the silicon substrate by the magnetoactive microwave plasma chemical vapor deposition (CVD) method. The substrate was seeded with nanocrystal diamond about 5 nm in diameter synthesized by the explosion process. The nanocrystal seeding brought about the improvement in quality of the fabricated films and the decrease in the time required for diamond nucleation. it took about 5 h to seed the scratched Si substrate at temperatures below 300 degrees C.

引用

页码：L312 / L315

页数：4

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