LOW ENERGY ELECTRON DIFFRACTION STUDY OF (3) DIAMOND SURFACE

[1] [Anonymous], 1962, Pat. USA, Patent No. 3030180

[2] STUDIES OF MONOLAYERS OF LEAD AND TIN ON SI(111) SURFACES [J]. SURFACE SCIENCE, 1964, 2 : 465 - 472

[3] LOW VOLTAGE ELECTRON DIFFRACTION STUDY OF OXIDATION AND REDUCTION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (06) : 2089 - &

[4] LOW-ENERGY ELECTRON DIFFRACTION STUDY OF GRAPHITE [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (12) : 3593 - &

[5] SURFACE REACTIONS OF SILICON (3) WITH ALUMINUM AND INDIUM [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (05) : 1706 - &

[6] LOW-ENERGY ELECTRON DIFFRACTION STUDIES OF (100) AND (111) SURFACES OF SEMICONDUCTING DIAMOND [J]. SURFACE SCIENCE, 1964, 1 (01) : 3 - 21

[7] POSSIBLE STRUCTURES FOR CLEAN, ANNEALED SURFACES OF GERMANIUM AND SILICON [J]. SURFACE SCIENCE, 1964, 2 : 473 - 483

[1] [Anonymous], 1962, Pat. USA, Patent No. 3030180

[2] STUDIES OF MONOLAYERS OF LEAD AND TIN ON SI(111) SURFACES [J]. SURFACE SCIENCE, 1964, 2 : 465 - 472

[3] LOW VOLTAGE ELECTRON DIFFRACTION STUDY OF OXIDATION AND REDUCTION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (06) : 2089 - &

[4] LOW-ENERGY ELECTRON DIFFRACTION STUDY OF GRAPHITE [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (12) : 3593 - &

[5] SURFACE REACTIONS OF SILICON (3) WITH ALUMINUM AND INDIUM [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (05) : 1706 - &

[6] LOW-ENERGY ELECTRON DIFFRACTION STUDIES OF (100) AND (111) SURFACES OF SEMICONDUCTING DIAMOND [J]. SURFACE SCIENCE, 1964, 1 (01) : 3 - 21

[7] POSSIBLE STRUCTURES FOR CLEAN, ANNEALED SURFACES OF GERMANIUM AND SILICON [J]. SURFACE SCIENCE, 1964, 2 : 473 - 483