LOW-ENERGY ELECTRON DIFFRACTION STUDIES OF (100) AND (111) SURFACES OF SEMICONDUCTING DIAMOND

被引：101

作者：

MARSH, JB

FARNSWORTH, HE

机构：

来源：

SURFACE SCIENCE | 1964年 / 1卷 / 01期

关键词：

D O I：

10.1016/0039-6028(64)90014-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：3 / 21

页数：19

共 19 条

[1] ULTRA-HIGH VACUUM .2. LIMITING FACTORS ON THE ATTAINMENT OF VERY LOW PRESSURE [J].

ALPERT, D ;

BURITZ, RS .

JOURNAL OF APPLIED PHYSICS, 1954, 25 (02) :202-209

[2] Sorption processes on diamond and graphite - Part I Reactions with hydrogen [J].

Barrer, RM .

JOURNAL OF THE CHEMICAL SOCIETY, 1936, :1256-1261

[3] Sorption processes on diamond and graphite - Part II Reactions of diamond with oxygen, carbon dioxide, and carbon monoxide [J].

Barrer, RM .

JOURNAL OF THE CHEMICAL SOCIETY, 1936, :1261-1268

[4]

EVANS T, 1960, SEP C DIAM PHYS U RE

[5] APPLICATION OF THE ION BOMBARDMENT CLEANING METHOD TO TITANIUM, GERMANIUM, SILICON, AND NICKEL AS DETERMINED BY LOW-ENERGY ELECTRON DIFFRACTION [J].

FARNSWORTH, HE ;

SCHLIER, RE ;

GEORGE, TH ;

BURGER, RM .

JOURNAL OF APPLIED PHYSICS, 1958, 29 (08) :1150-1161

[6]

FARNSWORTH HE, 1958, J PHYS CHEM SOLIDS, V9, P57

[7]

FARNSWORTH HE, 1959, J PHYS CHEM SOLIDS, V8, P116

[8] MODEL FOR (100) SURFACES OF SILICON AND GERMANIUM [J].

GREEN, M ;

SEIWATZ, R .

JOURNAL OF CHEMICAL PHYSICS, 1962, 37 (02) :458-&

[9] STRUCTURE AND ADSORPTION CHARACTERISTICS OF (III) AND (III-) SURFACE OF INSB CLEANED BY ION BOMBARDMENT AND ANNEALING [J].

HANEMAN, D .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 :162-168

[10] SURFACE STRUCTURES AND PROPERTIES OF DIAMOND-STRUCTURE SEMICONDUCTORS [J].

HANEMAN, D .

PHYSICAL REVIEW, 1961, 121 (04) :1093-&

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