POSSIBLE STRUCTURES FOR CLEAN, ANNEALED SURFACES OF GERMANIUM AND SILICON

[1] METAL-METAL BONDING IN DICOBALT HEXACARBONYL DIPHENYLACETYLENE [J]. JOURNAL OF CHEMICAL PHYSICS, 1960, 33 (04) : 1037 - 1043

[2] Cottrell T.L., 1958, STRENGTHS CHEMICAL B, P270

[3] Coulson C. A, 1952, VALENCE

[4] APPLICATION OF THE ION BOMBARDMENT CLEANING METHOD TO TITANIUM, GERMANIUM, SILICON, AND NICKEL AS DETERMINED BY LOW-ENERGY ELECTRON DIFFRACTION [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (08) : 1150 - 1161

[5] MODEL FOR (100) SURFACES OF SILICON AND GERMANIUM [J]. JOURNAL OF CHEMICAL PHYSICS, 1962, 37 (02) : 458 - &

[6] STRUCTURE AND ADSORPTION CHARACTERISTICS OF (III) AND (III-) SURFACE OF INSB CLEANED BY ION BOMBARDMENT AND ANNEALING [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 : 162 - 168

[7] SURFACE STRUCTURES AND PROPERTIES OF DIAMOND-STRUCTURE SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1961, 121 (04): : 1093 - &

[8] STRUCTURES OF CLEAN SURFACES OF GERMANIUM AND SILICON .1. [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (05) : 1403 - &

[9] LOW-ENERGY ELECTRON DIFFRACTION STUDY OF SILICON SURFACE STRUCTURES [J]. JOURNAL OF CHEMICAL PHYSICS, 1962, 37 (04) : 729 - &

[10] STRUCTURAL PROPERTIES OF CLEAVED SILICON AND GERMANIUM SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (08) : 2298 - +

[1] METAL-METAL BONDING IN DICOBALT HEXACARBONYL DIPHENYLACETYLENE [J]. JOURNAL OF CHEMICAL PHYSICS, 1960, 33 (04) : 1037 - 1043

[2] Cottrell T.L., 1958, STRENGTHS CHEMICAL B, P270

[3] Coulson C. A, 1952, VALENCE

[4] APPLICATION OF THE ION BOMBARDMENT CLEANING METHOD TO TITANIUM, GERMANIUM, SILICON, AND NICKEL AS DETERMINED BY LOW-ENERGY ELECTRON DIFFRACTION [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (08) : 1150 - 1161

[5] MODEL FOR (100) SURFACES OF SILICON AND GERMANIUM [J]. JOURNAL OF CHEMICAL PHYSICS, 1962, 37 (02) : 458 - &

[6] STRUCTURE AND ADSORPTION CHARACTERISTICS OF (III) AND (III-) SURFACE OF INSB CLEANED BY ION BOMBARDMENT AND ANNEALING [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 : 162 - 168

[7] SURFACE STRUCTURES AND PROPERTIES OF DIAMOND-STRUCTURE SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1961, 121 (04): : 1093 - &

[8] STRUCTURES OF CLEAN SURFACES OF GERMANIUM AND SILICON .1. [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (05) : 1403 - &

[9] LOW-ENERGY ELECTRON DIFFRACTION STUDY OF SILICON SURFACE STRUCTURES [J]. JOURNAL OF CHEMICAL PHYSICS, 1962, 37 (04) : 729 - &

[10] STRUCTURAL PROPERTIES OF CLEAVED SILICON AND GERMANIUM SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (08) : 2298 - +