THE EFFECTS OF PRESSURE, TEMPERATURE, AND TIME ON THE ANNEALING OF IONIZING-RADIATION INDUCED INSULATOR DAMAGE IN N-CHANNEL IGFETS

被引：40

作者：

REISMAN, A ^{[1
]}

MERZ, CJ ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1983年 / 130卷 / 06期

关键词：

D O I：

10.1149/1.2119958

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：1384 / 1390

页数：7

相关论文

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