TIME-LAG IN NUCLEATION OF OXIDE PRECIPITATES IN SILICON DUE TO HIGH-TEMPERATURE PRE-ANNEALING

被引：25

作者：

INOUE, N

WATANABE, K

WADA, K

OSAKA, J

机构：

[1] NTT Electrical Communications Laboratories, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa,243-01, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 84卷 / 01期

关键词：

D O I：

10.1016/0022-0248(87)90111-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：21 / 35

页数：15

相关论文

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