CL INCORPORATION AT THE SI/SIO2 INTERFACE DURING THE OXIDATION OF SI IN HCL/O2 AMBIENTS

被引：8

作者：

TSAI, HL ^{[1
]}

BUTLER, SR ^{[1
]}

WILLIAMS, DB ^{[1
]}

KRANER, HW ^{[1
]}

JONES, KW ^{[1
]}

机构：

[1] BROOKHAVEN NATL LAB,UPTON,NY 11973

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 02期

关键词：

D O I：

10.1149/1.2115596

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：411 / 418

页数：8

共 34 条

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[10] KINETICS OF THERMAL GROWTH OF HCI-O2 OXIDES ON SILICON [J].

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