A GENERAL GATE-CURRENT P-MOS LIFETIME PREDICTION METHOD APPLICABLE TO DIFFERENT CHANNEL STRUCTURES

A recently developed surface-channel p-MOS lifetime prediction technique based on injected gate charge is extended to buried-channel devices. It is shown that a more general form of the equation governing the degradation accurately describes the degradation behavior of both surface- and buried-channel transistors, indicating that the method has general applicability for p-channel transistors. © 1990 IEEE