THE ROLE OF OXYGEN SPECIES IN PHOTOCONDUCTION OF SURFACE OXIDIZED GE FILMS

被引：12

作者：

SUNADA, J ^{[1
]}

HASHIMOTO, Y ^{[1
]}

OISHI, K ^{[1
]}

FUKUCHI, K ^{[1
]}

机构：

[1] TEIKYO UNIV TECHNOL,FAC INFORMAT,ICHIHARA 29001,JAPAN

来源：

PHYSICS LETTERS A | 1990年 / 151卷 / 08期

关键词：

D O I：

10.1016/0375-9601(90)90920-J

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Surface oxidized Ge films show photoconduction for photons higher than 2.5 eV at room temperature, which is quite similar to that in Te-Te-oxide films. Based on the similarity of both systems, a model for the mechanism of photoconduction is proposed in terms of photodissociation of oxygen at the semiconductor-oxide interface.

引用

页码：447 / 451

页数：5

共 6 条

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[6] ULTRAVIOLET-LIGHT-ENHANCED REACTION OF OXYGEN WITH GALLIUM-ARSENIDE SURFACES [J].

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