SCANNING-TUNNELING-MICROSCOPE OBSERVATION OF 2X1 STRUCTURE ON A HOMOEPITAXIALLY GROWN SI(111) SURFACE

被引：18

作者：

YOKOYAMA, T

TANAKA, H

ITOH, M

YOKOTSUKA, T

SUMITA, I

机构：

[1] Matsushita Research Institute Tokyo, Inc., Higashimita, Tama-ku

来源：

PHYSICAL REVIEW B | 1994年 / 49卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.49.5703

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have used scanning tunneling microscopy to study molecular-beam epitaxial growth on Si(111)7 X 7 surface. On the homoepitaxially grown surface at 500-degrees-C, we find the small domains of non-DAS (dimer adatom stacking fault) rowlike ordered structures, the periodic rows of which run along the [011BAR] and [110BAR] directions. The atomic configuration of these structures seems to be consistent with Pandey's pi-bonded chain model for Si(111)2 X 1 structure. We discuss two kinds of pi-bonded chains, and the boundaries along the atomic rows between the 2 X 1 and DAS domains.

引用

页码：5703 / 5705

页数：3

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