DESIGN AND ANALYSIS OF INAS/ALSB BALLISTIC CONSTRICTIONS FOR HIGH-TEMPERATURE OPERATION AND LOW GATE LEAKAGE

被引：11

作者：

KOESTER, SJ ^{[1
]}

BOLOGNESI, CR ^{[1
]}

HU, EL ^{[1
]}

KROEMER, H ^{[1
]}

ROOKS, MJ ^{[1
]}

SNIDER, GL ^{[1
]}

机构：

[1] CORNELL UNIV,NATL NANOFABRICAT FACIL,ITHACA,NY 14853

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 06期

关键词：

D O I：

10.1116/1.586660

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Split-gate ballistic constrictions have been fabricated on two separate InAs/AlSb quantum well heterostructures. Constrictions in the initial material layer structure displayed quantized conductance to temperatures as high as 30 K, but suffered from poor reliability and large gate leakage current. Self-consistent Schrodinger-Poisson calculations indicate that donorlike states at the InAs-AlSb interface may aggravate the problem of gate leakage. Constrictions fabricated on an improved layer structure had gate leakage currents several orders of magnitude lower than in the original layer structure. This allowed measurement of quantized conductance with a dc measurement, up to bias voltages of 8 mV.

引用

页码：2528 / 2531

页数：4

共 18 条

[1] MICROWAVE PERFORMANCE OF A DIGITAL ALLOY BARRIER AL(SB,AS)/ALSB/INAS HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR [J].