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EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE ABOVE THE CO L2,3 EDGES IN ION-BEAM-SYNTHESIZED COSI2

被引：6
作者：
EISEBITT, S
RUBENSSON, JE
BOSKE, T
EBERHARDT, W
机构：
[1] Institut für Festkörperforschung, Forschungszentrum Jülich
来源：
PHYSICAL REVIEW B | 1993年 / 48卷 / 23期
关键词：
D O I：
10.1103/PhysRevB.48.17388
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
An analysis of the extended x-ray-absorption fine structure recorded at the Co L2,3 edges of CoSi2 is presented. Absorption was monitored by partial fluorescence yield, allowing us to investigate samples buried in a silicon wafer by means of ion-beam synthesis. The absorption spectrum is not distorted by Bragg diffraction beams due to the low photon energies. The additional Co L1 background is modeled by a splining procedure. The first-shell Co-Si distance in the annealed specimen was determined to be 2.32 +/- 0.05 angstrom.
引用
收藏
页码：17388 / 17392
页数：5
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