EXCITATION AND TEMPERATURE-DEPENDENCE OF THE PHOTOINDUCED EXCESS CONDUCTIVITY IN DOPING-MODULATED AMORPHOUS-SILICON

被引：32

作者：

KAKALIOS, J

机构：

[1] UNIV CHICAGO,JAMES FRANCK INST,CHICAGO,IL 60637

[2] UNIV CHICAGO,DEPT PHYS,CHICAGO,IL 60637

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1986年 / 54卷 / 03期

关键词：

D O I：

10.1080/13642818608239020

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：199 / 218

页数：20

共 26 条

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PHYSICAL REVIEW LETTERS, 1984, 53 (16) :1598-1601

[8] MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN DOPING-MODULATED AMORPHOUS-SILICON SUPERLATTICES [J].

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LEY, L .

PHYSICAL REVIEW B, 1985, 32 (10) :6655-6662

[9] PERSISTENT PHOTOCONDUCTIVITY IN DOPING-MODULATED AMORPHOUS-SEMICONDUCTORS [J].

KAKALIOS, J ;

FRITZSCHE, H .

PHYSICAL REVIEW LETTERS, 1984, 53 (16) :1602-1605

[10]

KAKALIOS J, 1984, AIP C P, V120, P425

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