EXCITATION AND TEMPERATURE-DEPENDENCE OF THE PHOTOINDUCED EXCESS CONDUCTIVITY IN DOPING-MODULATED AMORPHOUS-SILICON

被引:32
作者
KAKALIOS, J
机构
[1] UNIV CHICAGO,JAMES FRANCK INST,CHICAGO,IL 60637
[2] UNIV CHICAGO,DEPT PHYS,CHICAGO,IL 60637
来源
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1986年 / 54卷 / 03期
关键词
D O I
10.1080/13642818608239020
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:199 / 218
页数:20
相关论文
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