学术探索
学术期刊
新闻热点
数据分析
智能评审

CORRELATION BETWEEN EBIC CONTRASTS AND CRYSTALLOGRAPHIC STRUCTURE OF GRAIN-BOUNDARIES IN SILICON

被引：11
作者：
DIANTEILL, C
ROCHER, A
机构：
来源：
JOURNAL DE PHYSIQUE | 1982年 / 43卷 / NC1期
关键词：
D O I：
10.1051/jphyscol:1982111
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：75 / 82
页数：8
相关论文
共 23 条
[1]  
AMZIL H, 1981, THESIS MARSEILLE
[2]  
AUBERT JJ, 1980, 3RD EC PHOT SOL EN C, P589
[3]  
BRESSE JF, 1974, THESIS GRENOBLE
[4]   CHARGED GRAIN-BOUNDARIES IN GERMANIUM [J].
BRONIATOWSKI, A .
JOURNAL DE PHYSIQUE, 1981, 42 (05) :741-749
[5]   ON THE TRANSPORT-THEORY OF SCHOTTKY BARRIERS TO POLYCRYSTALLINE SILICON THIN-FILMS [J].
CARD, HC ;
HWANG, W .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (04) :700-705
[6]  
CUNNINGHAM B, 1982, 1981 MAT RES SOC S P, V5, P51
[7]   AN ANALYTICAL MODEL OF SEM AND STEM CHARGE COLLECTION IMAGES OF DISLOCATIONS IN THIN SEMICONDUCTOR LAYERS .2. EBIC IMAGES OF DISLOCATIONS [J].
DONOLATO, C .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 66 (02) :445-454
[8]  
DONOLATO C, 1978, OPTIK, V52, P10
[9]  
FATHY D, 1980, J MICROSC SPECT ELEC, V5, P175
[10]  
FONTAINE C, 1979, J MICROSC SPECTROSC, V4, P1
123