DRIFT FIELDS IN PHOTOVOLTAIC SOLAR ENERGY CONVERTER CELLS

[1] [Anonymous], 1959, SEMICONDUCTORS

[2] EVALUATION OF THE SURFACE CONCENTRATION OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (03): : 699 - 710

[3] DALE B, 1961, J APPL PHYS, V32, P1277

[4] DENNY JM, 1961, EM1021MR13 SPAC TECH

[5] DIFFUSANT IMPURITY-CONCENTRATION PROFILES IN THIN LAYERS ON SILICON [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 331 - &

[6] JOHNSON FS, 1954, J METEOROL, V11, P431, DOI 10.1175/1520-0469(1954)011<0431:TSC>2.0.CO

[7] 2

[8] JORDAN AG, 1960, IRE T, VED 7, P242

[9] REVIEW OF GERMANIUM SURFACE PHENOMENA [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (02) : 101 - 114

[10] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J]. PHYSICAL REVIEW, 1954, 96 (01): : 28 - 35

[1] [Anonymous], 1959, SEMICONDUCTORS

[2] EVALUATION OF THE SURFACE CONCENTRATION OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (03): : 699 - 710

[3] DALE B, 1961, J APPL PHYS, V32, P1277

[4] DENNY JM, 1961, EM1021MR13 SPAC TECH

[5] DIFFUSANT IMPURITY-CONCENTRATION PROFILES IN THIN LAYERS ON SILICON [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 331 - &

[6] JOHNSON FS, 1954, J METEOROL, V11, P431, DOI 10.1175/1520-0469(1954)011<0431:TSC>2.0.CO

[7] 2

[8] JORDAN AG, 1960, IRE T, VED 7, P242

[9] REVIEW OF GERMANIUM SURFACE PHENOMENA [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (02) : 101 - 114

[10] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J]. PHYSICAL REVIEW, 1954, 96 (01): : 28 - 35