ANISOTROPY IN SULFUR DOPING OF GAAS GROWN BY VPE

被引：5

作者：

GENTNER, JL

机构：

来源：

JOURNAL DE PHYSIQUE | 1982年 / 43卷 / NC-5期

关键词：

D O I：

10.1051/jphyscol:1982531

中图分类号：

学科分类号：

摘要：

引用

页码：267 / 270

页数：4

共 13 条

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[5]

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