SPECTROSCOPIC OBSERVATION OF DOUBLE DONORS IN OXYGEN-DOPED GERMANIUM

被引：11

作者：

CLAUWS, P

VENNIK, J

机构：

来源：

PHYSICAL REVIEW B | 1984年 / 30卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.30.4837

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4837 / 4838

页数：2

共 7 条

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[4]

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[6] SPECTROSCOPIC STUDIES OF 450-DEGREES-C THERMAL DONORS IN SILICON [J].

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[7] ELECTRICAL AND INFRARED SPECTROSCOPIC INVESTIGATIONS OF OXYGEN-RELATED DONORS IN SILICON [J].

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