DLTS AND PTIS OF NEW DONORS IN OXYGEN-DOPED GERMANIUM

被引：11

作者：

CLAUWS, P

BROECKX, J

SIMOEN, E

VENNIK, J

机构：

来源：

SOLID STATE COMMUNICATIONS | 1982年 / 44卷 / 07期

关键词：

D O I：

10.1016/0038-1098(82)90324-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1011 / 1014

页数：4

共 25 条

[1] PROPERTIES OF OXYGEN IN GERMANIUM [J].

BLOEM, J ;

HAAS, C ;

PENNING, P .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 12 (01) :22-27

[2] ZEEMAN EFFECT IN THE EXCITATION-SPECTRA OF SHALLOW ACCEPTORS IN GERMANIUM - EXPERIMENTAL [J].

BROECKX, J ;

CLAUWS, P ;

VANDENSTEEN, K ;

VENNIK, J .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (19) :4061-4079

[3]

CLAUWS P, 1979, I PHYS C SER, V46, P218

[4] HIGHER DONOR EXCITED STATES FOR PROLATE-SPHEROID CONDUCTION BANDS - A REEVALUATION OF SILICON AND GERMANIUM [J].

FAULKNER, RA .

PHYSICAL REVIEW, 1969, 184 (03) :713-&

[5] KINETICS OF DONOR REACTIONS IN OXYGEN-DOPED GERMANIUM [J].

FULLER, CS .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 19 (1-2) :18-28

[6] DONOR EQUILIBRIA IN THE GERMANIUM-OXYGEN SYSTEM [J].

FULLER, CS ;

KAISER, W ;

THURMOND, CD .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 17 (3-4) :301-307

[7] THE IONIZATION BEHAVIOR OF DONORS FORMED FROM OXYGEN IN GERMANIUM [J].

FULLER, CS ;

DOLEIDEN, FH .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 19 (3-4) :251-260

[8]

GONCHAROV LA, 1976, SOV PHYS SEMICOND+, V10, P580

[9] ELECTRONIC-PROPERTIES OF SELENIUM-DOPED SILICON [J].

GRIMMEISS, HG ;

JANZEN, E ;

SKARSTAM, B .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (07) :3740-3745

[10] DEEP SULFUR-RELATED CENTERS IN SILICON [J].

GRIMMEISS, HG ;

JANZEN, E ;

SKARSTAM, B .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) :4212-4217

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