PROFILE OF TRACER SI IN SILICIDE WHEN SI DIFFUSES BY VACANCY MECHANISM

[1] RADIOACTIVE N NI-STAR TRACER STUDY OF THE NICKEL SILICIDE GROWTH-MECHANISM [J]. THIN SOLID FILMS, 1982, 93 (3-4) : 255 - 264

[2] BARTUR M, 1983, J APPL PHYS, V54, P5407

[3] BOTHA AP, 1981, MATER RES SOC S P, V10, P129

[4] GROWTH-KINETICS OF PLANAR BINARY DIFFUSION COUPLES - THIN-FILM CASE VERSUS BULK CASES [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) : 3252 - 3260

[5] MATHEMATICAL-MODEL FOR A RADIOACTIVE MARKER IN SILICIDE FORMATION [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (12) : 4187 - 4193

[6] LIEN CD, UNPUB

[7] LIEN CD, 1984, MATER RES SOC S P, V25, P51

[8] NICOLET MA, 1983, VLSI ELECTRONICS MIC, V6, pCH6

[9] RADIOACTIVE SI-31 MARKER STUDIES OF METAL SILICIDE FORMATION - COMPUTER-SIMULATION [J]. THIN SOLID FILMS, 1982, 91 (02) : 99 - 109

[10] STUDIES OF THE GROWTH AND OXIDATION OF METAL-SILICIDES USING RADIOACTIVE SI-31 AS TRACER [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (01) : 107 - 112

[1] RADIOACTIVE N NI-STAR TRACER STUDY OF THE NICKEL SILICIDE GROWTH-MECHANISM [J]. THIN SOLID FILMS, 1982, 93 (3-4) : 255 - 264

[2] BARTUR M, 1983, J APPL PHYS, V54, P5407

[3] BOTHA AP, 1981, MATER RES SOC S P, V10, P129

[4] GROWTH-KINETICS OF PLANAR BINARY DIFFUSION COUPLES - THIN-FILM CASE VERSUS BULK CASES [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) : 3252 - 3260

[5] MATHEMATICAL-MODEL FOR A RADIOACTIVE MARKER IN SILICIDE FORMATION [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (12) : 4187 - 4193

[6] LIEN CD, UNPUB

[7] LIEN CD, 1984, MATER RES SOC S P, V25, P51

[8] NICOLET MA, 1983, VLSI ELECTRONICS MIC, V6, pCH6

[9] RADIOACTIVE SI-31 MARKER STUDIES OF METAL SILICIDE FORMATION - COMPUTER-SIMULATION [J]. THIN SOLID FILMS, 1982, 91 (02) : 99 - 109

[10] STUDIES OF THE GROWTH AND OXIDATION OF METAL-SILICIDES USING RADIOACTIVE SI-31 AS TRACER [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (01) : 107 - 112