SEU CHARACTERIZATION OF A HARDENED CMOS 64K AND 256K-SRAM

被引：31

作者：

SEXTON, FW

FU, JS

KOHLER, RA

KOGA, R

机构：

[1] AT&T BELL LABS,ALLENTOWN,PA 18103

[2] AEROSPACE CORP,LOS ANGELES,CA 90009

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1989年 / 36卷 / 06期

关键词：

D O I：

10.1109/23.45441

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2311 / 2317

页数：7

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