MECHANISMS LEADING TO SINGLE EVENT UPSET

被引：29

作者：

AXNESS, CL ^{[1
]}

WEAVER, HT ^{[1
]}

FU, JS ^{[1
]}

KOGA, R ^{[1
]}

KOLASINSKI, WA ^{[1
]}

机构：

[1] AEROSPACE CORP,LOS ANGELES,CA 90009

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1986年 / 33卷 / 06期

关键词：

D O I：

10.1109/TNS.1986.4334644

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1577 / 1580

页数：4

共 10 条

[1]

AXNESS CL, 1985, 4 P NASECODE C DUBL

[2] SINGLE EVENT UPSET RATE ESTIMATES FOR A 16-K CMOS SRAM [J].

BROWNING, JS ;

KOGA, R ;

KOLASINSKI, WA .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) :4133-4139

[3] MEMORY SEU SIMULATIONS USING 2-D TRANSPORT CALCULATIONS [J].

FU, JS ;

AXNESS, CL ;

WEAVER, HT .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (08) :422-424

[4] COMPARISON OF 2D MEMORY SEU TRANSPORT SIMULATION WITH EXPERIMENTS [J].

FU, JS ;

WEAVER, HT ;

KOGA, R ;

KOLASINSKI, WA .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) :4145-4149

[5] A FIELD-FUNNELING EFFECT ON THE COLLECTION OF ALPHA-PARTICLE-GENERATED CARRIERS IN SILICON DEVICES [J].

HSIEH, CM ;

MURLEY, PC ;

OBRIEN, RR .

ELECTRON DEVICE LETTERS, 1981, 2 (04) :103-105

[6]

MCCLEAN FB, 1982, IEEE T NUCL SCI, V29, P2018

[7] COLLECTION OF CHARGE ON JUNCTION NODES FROM ION TRACKS [J].

MESSENGER, GC .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) :2024-2031

[8] COMPARISON OF ANALYTICAL MODELS AND EXPERIMENTAL RESULTS FOR SINGLE EVENT UPSET IN CMOS SRAMS [J].

MNICH, TM ;

DIEHL, SE ;

SHAFER, BD ;

KOGA, R ;

KOLASINSKI, WA ;

OCHOA, A .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4620-4623

[9]

MOCK MS, 1983, 3 P NASECODE C DUBL, P1911

[10]

PICKEL JC, 1984, DNATR81259

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