DEPLETION-ELECTRIC-FIELD-INDUCED CHANGES IN 2ND-HARMONIC GENERATION FROM GAAS

被引：71

作者：

QI, J ^{[1
]}

YEGANEH, MS ^{[1
]}

KOLTOVER, I ^{[1
]}

YODH, AG ^{[1
]}

THEIS, WM ^{[1
]}

机构：

[1] USN,RES DEPT,DIV PHYS,CHINA LAKE,CA 93555

来源：

PHYSICAL REVIEW LETTERS | 1993年 / 71卷 / 04期

关键词：

D O I：

10.1103/PhysRevLett.71.633

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Experiments reveal that the near surface second-order nonlinear optical susceptibility, chi(2)(2omega,omega,omega), is significantly affected by band-bending induced-electric fields in the depletion region of GaAs(001). Both n- and p-type GaAs samples exhibit a reduction of the bulk second-order susceptibility chi(yxz)(2) independent of electric field direction. A three band theoretical model was used to qualitatively explain these observations.

引用

页码：633 / 636

页数：4

共 21 条

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