THE DEPOSITION OF PLATINUM-CONTAINING TIN OXIDE THIN-FILMS BY METAL-ORGANIC CVD

被引:19
作者
HOULTON, DJ
JONES, AC
HAYCOCK, PW
WILLIAMS, EW
BULL, J
CRITRCHLOW, GW
机构
[1] EPICHEM LTD,WIRRAL L62 3QF,MERSEYSIDE,ENGLAND
[2] UNIV LOUGHBOROUGH,INST SURFACE SCI & TECHNOL,LOUGHBOROUGH LE11 3TU,LEICS,ENGLAND
关键词
D O I
10.1002/cvde.19950010105
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Communication: The metal oxide semiconductor SnO2 has a range of important applications, such as in transparent and conducting coatings on glass, and in gas-sensing devices. CVD has a number of advantages as the technique of choice for the deposition of SnO2 thin films but development has in the past been hampered by the high toxicity of the available precursors and the necessity of adding an oxidant such as O-2 or H2O. Here, SnO2 deposition from the relatively non-toxic tetra-t-butoxide tin in the absence of added oxidant is reported. Platinum doping of the material is also discussed.
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页码:26 / &
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