PHONON-LIMITED MOBILITY IN GAALAS/GAAS HETEROSTRUCTURES

被引：36

作者：

VINTER, B

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 05期

关键词：

D O I：

10.1063/1.95288

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：581 / 582

页数：2

共 20 条

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[7]

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[9] IMPROVED ELECTRON-MOBILITY HIGHER THAN 106 CM2/VS IN SELECTIVELY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MBE [J].

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SAITO, J ;

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