ELECTRIC FIELD-INDUCED NEGATIVE PHOTOCONDUCTIVITY IN GAAS

被引：7

作者：

WIEDER, HH ^{[1
]}

HANSON, CM ^{[1
]}

ZULEEG, R ^{[1
]}

机构：

[1] MCDONNELL DOUGLAS ASTRONAUT CO,CTR MICROELECTR,HUNTINGTON BEACH,CA 92647

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 11期

关键词：

D O I：

10.1063/1.336735

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3911 / 3913

页数：3

共 20 条

[1]

[Anonymous], 1977, SEMICONDUCTORS SEMIM

[2] ON THE RESPONSE BEHAVIOR OF FAST PHOTOCONDUCTIVE OPTICAL PLANAR AND COAXIAL SEMICONDUCTOR-DETECTORS [J].

BENEKING, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (09) :1431-1441

[3] DEEP-LEVEL THERMAL SPECTROSCOPY AND DEEP-LEVEL OPTICAL SPECTROSCOPY - APPLICATION TO STUDY OF LATTICE-RELAXATION [J].

BOIS, D ;

CHANTRE, A .

REVUE DE PHYSIQUE APPLIQUEE, 1980, 15 (03) :631-646

[4] ELECTRIC-FIELD-INDUCED INFRARED ABSORPTION IN GAAS P-N JUNCTIONS [J].

BURGIEL, JC .

APPLIED PHYSICS LETTERS, 1966, 9 (11) :389-&

[5] INFRARED-ABSORPTION OF THE 78-MEV ACCEPTOR IN GAAS [J].

ELLIOTT, KR ;

HOLMES, DE ;

CHEN, RT ;

KIRKPATRICK, CG .

APPLIED PHYSICS LETTERS, 1982, 40 (10) :898-901

[6] DEEP ENERGY LEVELS IN HIGH RESISTANCE REGION AT GAAS VAPOR EPITAXIAL FILM-SUBSTRATE INTERFACE [J].

HASEGAWA, F .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (06) :638-&

[7]

KLEIN HJ, 1981, I PHYS C SER, V56, P369

[8] IDENTIFICATION OF OXYGEN-RELATED MIDGAP LEVEL IN GAAS [J].

LAGOWSKI, J ;

LIN, DG ;

AOYAMA, T ;

GATOS, HC .

APPLIED PHYSICS LETTERS, 1984, 44 (03) :336-338

[9]

LAGOWSKI J, 1982, I PHYS C SER, V65, P41

[10] ANALYSIS OF GAAS-FETS FOR INTEGRATED-LOGIC [J].

LEHOVEC, K ;

ZULEEG, R .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1074-1091

← 1 2 →