HETEROEPITAXY OF INSULATOR METAL SILICON STRUCTURES - CAF2/NISI2/SI(111) AND CAF2/COSI2/SI(111)

被引：19

作者：

FATHAUER, RW

HUNT, BD

SCHOWALTER, LJ

OKAMOTO, M

HASHIMOTO, S

机构：

[1] GE,CTR CORP RES & DEV,POB 8,SCHENECTADY,NY 12301

[2] SUNY ALBANY,DEPT PHYS,ALBANY,NY 12222

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 02期

关键词：

D O I：

10.1063/1.97353

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：64 / 66

页数：3

共 10 条

[1] SILICON METAL SILICIDE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
BEAN, JC
POATE, JM
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (07) : 643 - 646
[2] STRAIN-MEASUREMENT OF EPITAXIAL CAF2 ON SI(111) BY MEV ION CHANNELING
HASHIMOTO, S
PENG, JL
GIBSON, WM
SCHOWALTER, LJ
FATHAUER, RW
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1071 - 1073
[3] HUNT BD, UNPUB MATERIALS RES, V56
[4] HUNT BD, 1986, MATER RES SOC S P, V54, P479
[5] SILICON INSULATOR HETERO-EPITAXIAL STRUCTURES FORMED BY VACUUM DEPOSITION OF CAF2 AND SI
ISHIWARA, H
ASANO, T
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (01) : 66 - 68
[6] NOVEL TRIODE DEVICE USING METAL-INSULATOR SUPERLATTICE PROPOSED FOR HIGH-SPEED RESPONSE
NAKATA, Y
ASADA, M
SUEMATSU, Y
[J]. ELECTRONICS LETTERS, 1986, 22 (01) : 58 - 59
[7] GROWTH OF AN EPITAXIAL INSULATOR-METAL-SEMICONDUCTOR STRUCTURE ON SI BY MOLECULAR-BEAM EPITAXY
PHILLIPS, JM
AUGUSTYNIAK, WM
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (07) : 463 - 465
[8] MOLECULAR-BEAM EPITAXY GROWTH AND APPLICATIONS OF EPITAXIAL FLUORIDE FILMS
SCHOWALTER, LJ
FATHAUER, RW
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 1026 - 1032
[9] EPITAXIAL-GROWTH AND CHARACTERIZATION OF CAF2 ON SI
SCHOWALTER, LJ
FATHAUER, RW
GOEHNER, RP
TURNER, LG
DEBLOIS, RW
HASHIMOTO, S
PENG, JL
GIBSON, WM
KRUSIUS, JP
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) : 302 - 308
[10] FORMATION OF ULTRATHIN SINGLE-CRYSTAL SILICIDE FILMS ON SI - SURFACE AND INTERFACIAL STABILIZATION OF SI-NISI2 EPITAXIAL STRUCTURES
TUNG, RT
GIBSON, JM
POATE, JM
[J]. PHYSICAL REVIEW LETTERS, 1983, 50 (06) : 429 - 432

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