ELECTRONIC AND OPTICAL STUDIES WITH LANGMUIR-BLODGETT TRANSISTORS

被引：23

作者：

PALOHEIMO, J ^{[1
]}

STUBB, H ^{[1
]}

YLILAHTI, P ^{[1
]}

DYREKLEV, P ^{[1
]}

INGANAS, O ^{[1
]}

机构：

[1] LINKOPING UNIV,DEPT PHYS & MEASUREMENT TECHNOL,IFM,S-58183 LINKOPING,SWEDEN

来源：

THIN SOLID FILMS | 1992年 / 210卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(92)90235-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin film transistor structures have been used to study semiconducting poly(3-alkylthiopene) and quinquethiophene thin films. The holes in these materials are stored into self-localized polaronic states giving low values for the measured field-effect mobilities. The carrier mobilities in monolayers are lower than in thicker films. The extra holes injected into LB films in a transistor act as non-radiative recombination centers for photoexcited excitons. The transistor structure then acts as a luminescence quenching device. Some future prospects concerning LB electronics are presented.

引用

页码：283 / 286

页数：4

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