PREPARATION OF EPITAXIAL GALLIUMNITRIDE-II

被引:10
作者
NICKL, JJ [1 ]
JUST, W [1 ]
BERTINGER, R [1 ]
机构
[1] UNIV MUNICH,INST ANORG CHEM,FORSCH LAB FESTKORPER CHEM,MUNICH,FED REP GER
关键词
D O I
10.1016/0025-5408(75)90221-4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:1097 / 1104
页数:8
相关论文
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[2]   PREPARATION OF EPITAXIAL GALLIUM-NITRIDE [J].
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MATERIALS RESEARCH BULLETIN, 1974, 9 (10) :1413-1420
[3]   KINETICS OF EPITAXIAL-GROWTH OF GAN USING GA, HCL AND NH3 [J].
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