PHOTOEMISSION-STUDIES OF SURFACE-STATES ON SI(111)2X1

被引：20

作者：

HANSSON, GV

UHRBERG, RIG

NICHOLLS, JM

机构：

来源：

关键词：

D O I：

10.1016/0039-6028(83)90526-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：31 / 39

页数：9

共 18 条

[1] PI-BONDED MOLECULAR AND CHAIN MODELS FOR THE SI(111) SURFACE
CHADI, DJ
[J]. PHYSICAL REVIEW B, 1982, 26 (08): : 4762 - 4765
[2] DELSOLE R, 1981, PHYS REV B, V24, P7430
[3] EASTMAN DE, 1980, J VAC SCI TECHNOL, V17, P492, DOI 10.1116/1.570492
[4] ELECTRONIC-STRUCTURE OF SI(111) SURFACES
HANSSON, GV
BACHRACH, RZ
BAUER, RS
CHADI, DJ
GOPEL, W
[J]. SURFACE SCIENCE, 1980, 99 (01) : 13 - 27
[5] GEOMETRY-DEPENDENT SI(2P) SURFACE CORE-LEVEL EXCITATIONS FOR SI(111) AND SI(100) SURFACES
HIMPSEL, FJ
HEIMANN, P
CHIANG, TC
EASTMAN, DE
[J]. PHYSICAL REVIEW LETTERS, 1980, 45 (13) : 1112 - 1115
[6] SURFACE-STATES ON SI(111)-(2X1)
HIMPSEL, FJ
HEIMANN, P
EASTMAN, DE
[J]. PHYSICAL REVIEW B, 1981, 24 (04): : 2003 - 2008
[7] HIMPSEL FJ, UNPUB
[8] ELECTRONIC STATES OF SI(111) SURFACES
HOUZAY, F
GUICHAR, GM
PINCHAUX, R
PETROFF, Y
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03): : 860 - 865
[9] SPIN POLARIZATION AND ATOMIC GEOMETRY OF THE SI(111) SURFACE
NORTHRUP, JE
IHM, J
COHEN, ML
[J]. PHYSICAL REVIEW LETTERS, 1981, 47 (26) : 1910 - 1913
[10] RECONSTRUCTION MECHANISM AND SURFACE-STATE DISPERSION FOR SI(111)-(2 X 1)
NORTHRUP, JE
COHEN, ML
[J]. PHYSICAL REVIEW LETTERS, 1982, 49 (18) : 1349 - 1352