PHOTOEMISSION-STUDIES OF SURFACE-STATES ON SI(111)2X1

[11] NEW PI-BONDED CHAIN MODEL FOR SI(111)-(2BY1) SURFACE [J]. PHYSICAL REVIEW LETTERS, 1981, 47 (26) : 1913 - 1917

[12] SURFACE-STATES AND THE SURFACE-STRUCTURE OF CLEAVED SILICON [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (24): : L993 - L996

[13] REDONDO A, 1982, J VAC SCI TECHNOL, V21, P649, DOI 10.1116/1.571806

[14] REDONDO A, UNPUB

[15] MEASUREMENT OF ANGLE OF DANGLING-BOND PHOTOEMISSION FROM CLEAVED SILICON [J]. PHYSICAL REVIEW LETTERS, 1974, 33 (22) : 1333 - 1335

[16] ANGULAR-DISTRIBUTION OF PHOTOELECTRONS FROM (111) SILICON SURFACE STATES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01): : 298 - 300

[17] EXPERIMENTAL-EVIDENCE FOR ONE HIGHLY DISPERSIVE DANGLING-BOND BAND ON SI(111) 2X1 [J]. PHYSICAL REVIEW LETTERS, 1982, 48 (15) : 1032 - 1035

[18] EXPERIMENTAL SURFACE-STATE BANDS OF THE SI(111) 2X1 RECONSTRUCTION [J]. SURFACE SCIENCE, 1982, 117 (1-3) : 394 - 404

[11] NEW PI-BONDED CHAIN MODEL FOR SI(111)-(2BY1) SURFACE [J]. PHYSICAL REVIEW LETTERS, 1981, 47 (26) : 1913 - 1917

[12] SURFACE-STATES AND THE SURFACE-STRUCTURE OF CLEAVED SILICON [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (24): : L993 - L996

[13] REDONDO A, 1982, J VAC SCI TECHNOL, V21, P649, DOI 10.1116/1.571806

[14] REDONDO A, UNPUB

[15] MEASUREMENT OF ANGLE OF DANGLING-BOND PHOTOEMISSION FROM CLEAVED SILICON [J]. PHYSICAL REVIEW LETTERS, 1974, 33 (22) : 1333 - 1335

[16] ANGULAR-DISTRIBUTION OF PHOTOELECTRONS FROM (111) SILICON SURFACE STATES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01): : 298 - 300

[17] EXPERIMENTAL-EVIDENCE FOR ONE HIGHLY DISPERSIVE DANGLING-BOND BAND ON SI(111) 2X1 [J]. PHYSICAL REVIEW LETTERS, 1982, 48 (15) : 1032 - 1035

[18] EXPERIMENTAL SURFACE-STATE BANDS OF THE SI(111) 2X1 RECONSTRUCTION [J]. SURFACE SCIENCE, 1982, 117 (1-3) : 394 - 404