THE EFFECT OF LIGHT SOAKING ON THE LOW-TEMPERATURE PHOTOCONDUCTIVITY OF HYDROGENATED AMORPHOUS-SILICON

被引：34

作者：

VANIER, PE

机构：

来源：

SOLAR CELLS | 1983年 / 9卷 / 1-2期

关键词：

D O I：

10.1016/0379-6787(83)90078-9

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

引用

收藏

页码：85 / 93

页数：9

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[1] BIEGELSEN DK, 1980, SOL CELLS, V2, P421, DOI 10.1016/0379-6787(80)90018-6
[2] IDENTIFICATION OF THE DANGLING-BOND STATE WITHIN THE MOBILITY GAP OF ALPHA-SI-H BY DEPLETION-WIDTH-MODULATED ELECTRON-SPIN-RESONANCE SPECTROSCOPY
COHEN, JD
HARBISON, JP
WECHT, KW
[J]. PHYSICAL REVIEW LETTERS, 1982, 48 (02) : 109 - 112
[3] EFFECTS OF MONOCHLOROSILANE ON THE PROPERTIES OF PLASMA DEPOSITED HYDROGENATED AMORPHOUS-SILICON
DELAHOY, AE
GRIFFITH, RW
KAMPAS, FJ
VANIER, PE
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (05) : 869 - 882
[4] LIGHT-INDUCED DANGLING BONDS IN HYDROGENATED AMORPHOUS-SILICON
DERSCH, H
STUKE, J
BEICHLER, J
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (06) : 456 - 458
[5] VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS
KASTNER, M
ADLER, D
FRITZSCHE, H
[J]. PHYSICAL REVIEW LETTERS, 1976, 37 (22) : 1504 - 1507
[6] OBSERVATION OF PHOTOINDUCED CHANGES IN THE BULK-DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON
LANG, DV
COHEN, JD
HARBISON, JP
SERGENT, AM
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (06) : 474 - 476
[7] DEFECT CREATION BY OPTICAL-EXCITATION IN HYDROGENATED AMORPHOUS-SILICON AS ELUCIDATED BY OPTICALLY DETECTED MAGNETIC-RESONANCE
MORIGAKI, K
SANO, Y
HIRABAYASHI, I
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1982, 51 (01) : 147 - 152
[8] SPIN-DEPENDENT PHOTOCONDUCTIVITY IN N-TYPE AND P-TYPE AMORPHOUS SILICON
SOLOMON, I
BIEGELSEN, D
KNIGHTS, JC
[J]. SOLID STATE COMMUNICATIONS, 1977, 22 (08) : 505 - 508
[9] REVERSIBLE CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED AMORPHOUS SI
STAEBLER, DL
WRONSKI, CR
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (04) : 292 - 294
[10] PHOTO-CREATION OF DEFECTS IN PLASMA-DEPOSITED A-SI-H
TANIELIAN, MH
GOODMAN, NB
FRITZSCHE, H
[J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 375 - 378